Course Contents

• Introduction to power semiconductor devices, basic learning and demonstration of Sentaurus TCAD tools
• PN-junction and Schottky diode theory and simulations for understanding fundamental device behavior, design, and optimization
• Forward and reverse I–V characteristics of power PN junction and Schottky diodes
• Effect of n-type epi doping variation on forward voltage drop (Vf) and breakdown voltage (BV) for power PN junction and Schottky diodes
• Influence of epi thickness variation on device performance parameters (Vf and BV) for power PN junction and Schottky diodes
• Impact of metal work function variation on Schottky diode characteristics
• Silicon Trench-Gate MOSFETs, fundamentals of Si trench-gate MOSFETs—device structure, operation, and design principles
• Process simulation and electrical characterization using Sentaurus TCAD (Id-Vg, Id-Vd, BV)
• Analysis of process variations (n-Epi, p-Well, oxide, trench depth, cell pitch) on device performance and reliability
• p-GaN HEMTs, Introduction to p-GaN enhancement-mode HEMTs—structure, operation, and heterostructure formation.
• Simulation of Id-Vg, Id-Vd, and C-V characteristics with energy-band and electric-field analysis using TCAD
• Study of Al mole fraction, barrier thickness, and p-GaN doping effects on threshold voltage and performance
• Comparison of SiC vs Si DMOSFETs using TCAD to highlight the advantages of SiC power devices
• 2D SiC-DMOSFET TCAD simulations of transfer, output, and breakdown curves, exploring design trade-offs like oxide quality, scaling, and channel counter-doping
• Demonstration of Silicon planar-IGBT 2D-TCAD simulation with mixed-mode Sdevice simulation of a full-bridge inverter circuit consisting of 4 IGBTs for DC-AC conversion